Very strong nonlinear optical absorption in green GaInN/GaN multiple quantum well structures
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منابع مشابه
Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells
The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronholewave functions, absorption coefficient, and dielectric con...
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Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved...
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In an attempt to identify the performance limiting factors of green GaInN/GaN light emitting diodes (LEDs) we analyze a large number of LED dies fabricated from over 160 epitaxy runs covering the wavelength range from 390 – 580 nm on a quantitative scale of the emission power. As a function of drive current, we analyze the external quantum efficiency (EQE) with particular emphasis on the low cu...
متن کاملوابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی
Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
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Ga 1~x In x N/GaN multiple quantum well heterostructures and thin Ga 1~x In x N/GaN films (0.03)x)0.22) are studied by photoreflection and photoluminescence spectroscopy at room temperature. In the thin single films we find strong interaction of heavy hole and light hole valence bands throughout the composition range. In MQW structures a splitting of those bands due to quantization is observed ...
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تاریخ انتشار 2008